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Wall charge holding characteristics of doped MgO thin film for ac-PDP
- Authors
- Yoon, Sang-Hoon; Yang, Hee-Sun; Kim, Yong-Seog
- Issue Date
- 2007
- Publisher
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- Citation
- IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, pp.811 - 812
- Journal Title
- IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
- Start Page
- 811
- End Page
- 812
- Abstract
- Wall voltage holding characteristics of doped MgO were evaluated using VT close curve measurement. The results revealed that the holding characteristics are poor with the doped film. The causes of such poor characteristics were examined using FTIR measurements. The results indicated that shallow defects levels formed by doping may be responsible for such poor wall voltage holding characteristics.
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Related Researcher
- Yang, Hee sun
- Graduate School (Department of Materials Science and Engineering)