Uniform poly-Si TFTs for AMOLEDs using field-enhanced rapid thermal annealing.
- Authors
- Ryu, Sung-Ryong; Nam, Seung-Eui; Kim, Hyoung-June
- Issue Date
- 2007
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Keywords
- crystallization; TFTs; AMLCD; AMOLED
- Citation
- ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, v.124-126, pp.447 - +
- Journal Title
- ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2
- Volume
- 124-126
- Start Page
- 447
- End Page
- +
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29979
- ISSN
- 1012-0394
- Abstract
- Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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