Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxyopen access
- Authors
- Shin, S.; Kim, K.H.; Lee, G.S.; Lee, J.H.; Ahn, H.S.; Cha, H.-Y.
- Issue Date
- 1-Sep-2022
- Publisher
- Elsevier B.V.
- Keywords
- 2H-Si; Electrical properties; Heterojunction PN diode; Hexagonal lonsdaleite silicon; Hot probe measurement; HVPE; Mobility
- Citation
- Results in Physics, v.40
- Journal Title
- Results in Physics
- Volume
- 40
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30238
- DOI
- 10.1016/j.rinp.2022.105857
- ISSN
- 2211-3797
2211-3797
- Abstract
- Hexagonal 2H polytypes of Si (2H-Si) exhibit promising mechanical and optical properties owing to their crystal structures with quasi-direct bandgap characteristics. However, few studies have investigated the electrical properties of 2H-Si semiconductors. In this study, we used a hot-probe measurement to determine the doping type of 2H-Si microwires (MWs) prepared by hydride vapor-phase epitaxy (HVPE). It was found that the 2H-Si MWs had unintentional n-type characteristics. For the first time, a heterojunction PN diode with n-type 2H-Si MW and p-type Si (100) was fabricated. According to the current–voltage and capacitance–voltage measurements, the n-type doping concentration of the unintentionally doped 2H-Si MWs was 4.3–9.5 × 1015 cm−3 and the electron mobility was 260–580 cm2/V·s. © 2022
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