Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitorsopen access
- Authors
- Im, K.-S.; Shin, S.; Jang, C.-H.; Cha, H.-Y.
- Issue Date
- 1-Nov-2022
- Publisher
- MDPI
- Keywords
- ferroelectric; HfO2; low-frequency noise
- Citation
- Materials, v.15, no.21
- Journal Title
- Materials
- Volume
- 15
- Number
- 21
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/30588
- DOI
- 10.3390/ma15217475
- ISSN
- 1996-1944
- Abstract
- The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole–Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (SI) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × SI/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry. © 2022 by the authors.
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