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Activation Behavior of SLS and ELC Poly-Si after Ion Shower Doping
- Issue Date
- 2019
- Publisher
- IJETAE Publication House
- Keywords
- Activation annealing; Boron; Crystallization; Ion shower doping; Poly-Si; Silicon
- Citation
- International Journal of Emerging Technology and Advanced Engineering, v.9, no.7, pp.28 - 32
- Journal Title
- International Journal of Emerging Technology and Advanced Engineering
- Volume
- 9
- Number
- 7
- Start Page
- 28
- End Page
- 32
- Abstract
- — Thermal activation was carried out using SLS (sequential lateral solidification) poly-Si or ELC (excimer laser crystallization) poly-Si after B+ ion shower doping. Reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between 400℃ and 650℃ investigated in this study. The SLS samples were observed to exhibit lower activation efficiency than the ELC ones. Grain boundaries seemed to play a critical role for dopant activation in poly-Si at low temperatures. The RTA (rapid thermal annealing) treated samples were observed to exhibit lower sheet resistance than the FA (furnace annealing) treated ones at a given annealing temperature. The reverse annealing is believed to play an important role for activation efficiency. © 2019 IJETAE Publication House. All rights reserved.
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