Utilizing VO2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance
DC Field | Value | Language |
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dc.contributor.author | Cho, Han Bin | - |
dc.contributor.author | Han, Ju Yeon | - |
dc.contributor.author | Kim, Ha Jun | - |
dc.contributor.author | Viswanath, Noolu Srinivasa Manikanta | - |
dc.contributor.author | Park, Yong Min | - |
dc.contributor.author | Min, Jeong Wan | - |
dc.contributor.author | Jang, Sung Woo | - |
dc.contributor.author | Yang, Heesun | - |
dc.contributor.author | Im, Won Bin | - |
dc.date.accessioned | 2023-06-19T07:40:23Z | - |
dc.date.available | 2023-06-19T07:40:23Z | - |
dc.date.issued | 2023-06-08 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/31258 | - |
dc.description.abstract | Quantum dot light-emitting diodes(QLEDs) are promising devicesfor display applications. Polyethylenedioxythiophene:polystyrene sulfonate(PEDOT:PSS) is a common hole injection layer (HIL) material in optoelectronicdevices because of its high conductivity and high work function. Nevertheless,PEDOT:PSS-based QLEDs have a high energy barrier for hole injection,which results in low device efficiency. Therefore, a new strategyis needed to improve the device efficiency. Herein, we have demonstrateda bilayer-HIL using VO2 and a PEDOT:PSS-based QLED thatexhibits an 18% external quantum efficiency (EQE), 78 cd/A currentefficiency (CE), and 25,771 cd/m(2) maximum luminance. Incontrast, the PEDOT:PSS-based QLED exhibits an EQE of 13%, CE of 54cd/A, and maximum luminance of 14,817 cd/m(2). An increasein EQE was attributed to a reduction in the energy barrier betweenindium tin oxide (ITO) and PEDOT:PSS, caused by the insertion of aVO(2) HIL. Therefore, our results could demonstrate thatusing a bilayer-HIL is effective in increasing the EQE in QLEDs. | - |
dc.format.extent | 8 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Utilizing VO2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsami.3c02857 | - |
dc.identifier.scopusid | 2-s2.0-85163754206 | - |
dc.identifier.wosid | 001003400200001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.15, no.24, pp 29259 - 29266 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 15 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 29259 | - |
dc.citation.endPage | 29266 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordAuthor | vanadium dioxide | - |
dc.subject.keywordAuthor | hole injection layer | - |
dc.subject.keywordAuthor | rapidthermal annealing | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | light extraction | - |
dc.subject.keywordAuthor | quantum dot light-emitting diodes | - |
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