Utilizing VO2 as a Hole Injection Layer for Efficient Charge Injection in Quantum Dot Light-Emitting Diodes Enables High Device Performance
- Authors
- Cho, Han Bin; Han, Ju Yeon; Kim, Ha Jun; Viswanath, Noolu Srinivasa Manikanta; Park, Yong Min; Min, Jeong Wan; Jang, Sung Woo; Yang, Heesun; Im, Won Bin
- Issue Date
- 8-Jun-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- vanadium dioxide; hole injection layer; rapidthermal annealing; thermal stability; light extraction; quantum dot light-emitting diodes
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.15, no.24, pp 29259 - 29266
- Pages
- 8
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 15
- Number
- 24
- Start Page
- 29259
- End Page
- 29266
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/31258
- DOI
- 10.1021/acsami.3c02857
- ISSN
- 1944-8244
1944-8252
- Abstract
- Quantum dot light-emitting diodes(QLEDs) are promising devicesfor display applications. Polyethylenedioxythiophene:polystyrene sulfonate(PEDOT:PSS) is a common hole injection layer (HIL) material in optoelectronicdevices because of its high conductivity and high work function. Nevertheless,PEDOT:PSS-based QLEDs have a high energy barrier for hole injection,which results in low device efficiency. Therefore, a new strategyis needed to improve the device efficiency. Herein, we have demonstrateda bilayer-HIL using VO2 and a PEDOT:PSS-based QLED thatexhibits an 18% external quantum efficiency (EQE), 78 cd/A currentefficiency (CE), and 25,771 cd/m(2) maximum luminance. Incontrast, the PEDOT:PSS-based QLED exhibits an EQE of 13%, CE of 54cd/A, and maximum luminance of 14,817 cd/m(2). An increasein EQE was attributed to a reduction in the energy barrier betweenindium tin oxide (ITO) and PEDOT:PSS, caused by the insertion of aVO(2) HIL. Therefore, our results could demonstrate thatusing a bilayer-HIL is effective in increasing the EQE in QLEDs.
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Collections - Graduate School > Materials Science and Engineering > 1. Journal Articles
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