Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors
DC Field | Value | Language |
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dc.contributor.author | Shin, Wonjun | - |
dc.contributor.author | Koo, Ryun-Han | - |
dc.contributor.author | Hong, Seongbin | - |
dc.contributor.author | Jeong, Yujeong | - |
dc.contributor.author | Jung, Gyuweon | - |
dc.contributor.author | Lee, Sung-Tae | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.date.accessioned | 2024-04-16T02:31:12Z | - |
dc.date.available | 2024-04-16T02:31:12Z | - |
dc.date.issued | 2023-10-01 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32927 | - |
dc.description.abstract | This study investigates the effects of post-deposition annealing (PDA) ambient and film thickness on the low-frequency noise (LFN) of IGZO thin film gas sensors. Various thicknesses of IGZO thin films are deposited and subjected to post-annealing in different ambient conditions. The oxygen vacancy-rich characteristics of the IGZO films lead to enhanced response and reduced 1/<italic>f</italic> noise when post-annealed in a vacuum environment. The thinner IGZO material exhibits a greater response than the thicker film, albeit at the expense of more noise. Consequently, the signal-to-noise ratio (SNR) of the 30 nm IGZO film post-annealed in a vacuum environment is the largest. IEEE | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2023.3303122 | - |
dc.identifier.scopusid | 2-s2.0-85168747425 | - |
dc.identifier.wosid | 001078835200074 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.70, no.10, pp 1 - 4 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 70 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | Conductivity | - |
dc.subject.keywordAuthor | Gas detectors | - |
dc.subject.keywordAuthor | Gas sensor | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | limit of detection (LOD) | - |
dc.subject.keywordAuthor | low-frequency noise (LFN) | - |
dc.subject.keywordAuthor | NO<inline-formula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchema-instance> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> | - |
dc.subject.keywordAuthor | Sensors | - |
dc.subject.keywordAuthor | Signal to noise ratio | - |
dc.subject.keywordAuthor | signal-to-noise ratio (SNR) | - |
dc.subject.keywordAuthor | Temperature measurement | - |
dc.subject.keywordAuthor | Thickness measurement | - |
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