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Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors
- Authors
- Shin, Wonjun; Koo, Ryun-Han; Hong, Seongbin; Jeong, Yujeong; Jung, Gyuweon; Lee, Sung-Tae; Lee, Jong-Ho
- Issue Date
- 1-Oct-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Annealing; Conductivity; Gas detectors; Gas sensor; IGZO; limit of detection (LOD); low-frequency noise (LFN); NO<inline-formula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchema-instance> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula>; Sensors; Signal to noise ratio; signal-to-noise ratio (SNR); Temperature measurement; Thickness measurement
- Citation
- IEEE Transactions on Electron Devices, v.70, no.10, pp 1 - 4
- Pages
- 4
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 70
- Number
- 10
- Start Page
- 1
- End Page
- 4
- ISSN
- 0018-9383
1557-9646
- Abstract
- This study investigates the effects of post-deposition annealing (PDA) ambient and film thickness on the low-frequency noise (LFN) of IGZO thin film gas sensors. Various thicknesses of IGZO thin films are deposited and subjected to post-annealing in different ambient conditions. The oxygen vacancy-rich characteristics of the IGZO films lead to enhanced response and reduced 1/<italic>f</italic> noise when post-annealed in a vacuum environment. The thinner IGZO material exhibits a greater response than the thicker film, albeit at the expense of more noise. Consequently, the signal-to-noise ratio (SNR) of the 30 nm IGZO film post-annealed in a vacuum environment is the largest. IEEE
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Related Researcher
- Lee, Sung-Tae
- Engineering (Electronic & Electrical Engineering)