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Gallium Nitride Negative Capacitance Heterojunction Field-Effect Transistors with 5x10^8 On/Off Ratio and 22 mV/dec Subthreshold Slope
- Authors
- 차호영
- Issue Date
- 22-Aug-2018
- Publisher
- 사단법인 한국 LED·광전자학회
- Citation
- 사단법인 한국 LED·광전자학회 , v.0, no.0, pp.0 - 0
- Journal Title
- 사단법인 한국 LED·광전자학회
- Volume
- 0
- Number
- 0
- Start Page
- 0
- End Page
- 0
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)