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Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress

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dc.contributor.authorKoo, Ryun-Han-
dc.contributor.authorShin, Wonjun-
dc.contributor.authorRyu, Sangwoo-
dc.contributor.authorKim, Seungwhan-
dc.contributor.authorJung, Gyuweon-
dc.contributor.authorLee, Sung-Tae-
dc.contributor.authorKim, Jae-Joon-
dc.contributor.authorKwon, Daewoong-
dc.contributor.authorLee, Jong-Ho-
dc.date.accessioned2024-07-15T06:30:24Z-
dc.date.available2024-07-15T06:30:24Z-
dc.date.issued2024-06-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33352-
dc.description.abstractWe investigate domain wall (DW) movementin hafnium zirconium oxide (HZO) under various temper-ature (T) and cycling stresses. It is demonstrated thatcycling stress distinctly impacts the behavior in the DW relaxation, creep, and flow regimes. Specifically, cyclingstress increases the energy barrier that DW must overcometo transition from the relaxation to creep regime. However,it has a negligible effect on the boundary condition ofthe electrical (E)-field value between the creep and flowregimes. Consequently, aT-Ephase diagram for HZO ispresented, which distinctively delineates these regimes,and offers clear insights into the cycling stress-inducedchanges in ferroelectric DW dynamics-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleExamination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2024.3390090-
dc.identifier.scopusid2-s2.0-85190738009-
dc.identifier.wosid001230989200032-
dc.identifier.bibliographicCitationIEEE ELECTRON DEVICE LETTERS, v.45, no.6, pp 1016 - 1019-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume45-
dc.citation.number6-
dc.citation.startPage1016-
dc.citation.endPage1019-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusE HYSTERESIS LOOP-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordAuthorCreep-
dc.subject.keywordAuthorSwitches-
dc.subject.keywordAuthorStress-
dc.subject.keywordAuthorIron-
dc.subject.keywordAuthorCurrent measurement-
dc.subject.keywordAuthorDynamics-
dc.subject.keywordAuthorBoundary conditions-
dc.subject.keywordAuthorHafnium zirconium oxide (HZO)-
dc.subject.keywordAuthorferroelectric tunnel junction (FTJ)-
dc.subject.keywordAuthorswitching mechanism-
dc.subject.keywordAuthordomain wall (DW)-
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