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Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress
- Authors
- Koo, Ryun-Han; Shin, Wonjun; Ryu, Sangwoo; Kim, Seungwhan; Jung, Gyuweon; Lee, Sung-Tae; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho
- Issue Date
- Jun-2024
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Creep; Switches; Stress; Iron; Current measurement; Dynamics; Boundary conditions; Hafnium zirconium oxide (HZO); ferroelectric tunnel junction (FTJ); switching mechanism; domain wall (DW)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.45, no.6, pp 1016 - 1019
- Pages
- 4
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 45
- Number
- 6
- Start Page
- 1016
- End Page
- 1019
- ISSN
- 0741-3106
1558-0563
- Abstract
- We investigate domain wall (DW) movementin hafnium zirconium oxide (HZO) under various temper-ature (T) and cycling stresses. It is demonstrated thatcycling stress distinctly impacts the behavior in the DW relaxation, creep, and flow regimes. Specifically, cyclingstress increases the energy barrier that DW must overcometo transition from the relaxation to creep regime. However,it has a negligible effect on the boundary condition ofthe electrical (E)-field value between the creep and flowregimes. Consequently, aT-Ephase diagram for HZO ispresented, which distinctively delineates these regimes,and offers clear insights into the cycling stress-inducedchanges in ferroelectric DW dynamics
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Related Researcher
- Lee, Sung-Tae
- Engineering (Electronic & Electrical Engineering)