Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation
- Authors
- Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo
- Issue Date
- Jun-2018
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- MOS HEMT; Capacitance-voltage; Interfacial trap; Resonance excitation
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.11, pp.1332 - 1336
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 72
- Number
- 11
- Start Page
- 1332
- End Page
- 1336
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3616
- DOI
- 10.3938/jkps.72.1332
- ISSN
- 0374-4884
- Abstract
- We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent (F-D) capacitance-voltage (C-V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage (V (th) ). A drastic voltage shift in the C-V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V (th) with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.
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