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An Implementation of a Linear-sensitivity Pressure-sensor System

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dc.contributor.authorHong, Sung-Hee-
dc.contributor.authorCho, Chun-Hyung-
dc.date.available2020-07-10T04:28:59Z-
dc.date.created2020-07-06-
dc.date.issued2018-04-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3874-
dc.description.abstractIn this work, we designed and developed an integrated pressure-sensor system with a perfectly linear sensitivity. We used a resistive-type indicator pressure-sensor in order to measure a gas-level which is observed to be inversely proportional to sensor output-resistance. Then, the output resistance was converted into the corresponding voltage which was processed via several sensor-conditioning steps (buffering, level-shifting, amplification). We analyzed the sensitivity errors at level-shifting stage and then proposed the new and simple approach for a perfectly linear-sensitivity in sensor-conditioning processes by using only a constant voltage supply without the potentiometer, which is common in previous works. Even though the sensor output was generally adjusted to the full scale of the reading, we have a perfectly linear sensitivity and the devices fabricated exhibited linear characteristics without any sensitivity error.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEK PUBLICATION CENTER-
dc.subjectTEMPERATURE-DEPENDENCE-
dc.subjectSTRESS-SENSORS-
dc.subjectSILICON-
dc.subjectCOEFFICIENTS-
dc.subjectVAN-
dc.titleAn Implementation of a Linear-sensitivity Pressure-sensor System-
dc.typeArticle-
dc.contributor.affiliatedAuthorCho, Chun-Hyung-
dc.identifier.doi10.5573/JSTS.2018.18.2.146-
dc.identifier.scopusid2-s2.0-85046457541-
dc.identifier.wosid000432340100004-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.2, pp.146 - 152-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume18-
dc.citation.number2-
dc.citation.startPage146-
dc.citation.endPage152-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.identifier.kciidART002338821-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTEMPERATURE-DEPENDENCE-
dc.subject.keywordPlusSTRESS-SENSORS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusCOEFFICIENTS-
dc.subject.keywordPlusVAN-
dc.subject.keywordAuthorPressure-sensor-
dc.subject.keywordAuthorlinearity in sensitivity-
dc.subject.keywordAuthorsensor-conditioning-
dc.subject.keywordAuthorsensitivity error-
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