A Sensitivity-controllable Shear-stress Sensor with 2 Sets of+45/-45 Degree Semiconductor Resistor-sensor Pair

Abstract

In this paper, we investigated the most enhanced shear-stress sensor by using 2 mid-points measurements in a separate +/- 45 degrees semiconductor resistor-sensor pair. Compared to our latest works, we added an additional +/- 45 degrees semiconductor resistor-sensor pair upside down, and the sensitivity was observed to be significantly increased approximately by 100% (2 times) compared to the result for our latest work. Also, we validated our results analytically by error analysis in sensitivity. Furthermore, we proposed a simple and efficient measurement-technique for the shear-stress calculation in which we just needed to measure voltage between the midpoints without the need for calculating the voltage ratio in each resistor-sensor pair. By this technique, we could increase the shear-sensitivity by controlling the common applied voltage between the sensor pairs. As an example, for the applied voltage of 8V between the pair, the sensitivity showed a significant increase by 300 % (4 times).