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Hydrothermal growth and luminescent properties of nonpolar a-plane (11-20) ZnCdO films for light-emitting diodes
- Authors
- Baik, Kwang Hyeon; Kim, Jimin; Jang, Soohwan
- Issue Date
- 30-Mar-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ZnCdO; Film; Hydrothermal growth; LED
- Citation
- APPLIED SURFACE SCIENCE, v.435, pp.592 - 598
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 435
- Start Page
- 592
- End Page
- 598
- ISSN
- 0169-4332
- Abstract
- Nonpolar a-plane ZnCdO films have been obtained on a-plane GaN using a simple low-cost hydrothermal growth method at the low temperature of 80 degrees C. The morphological, structural, optical, and electrical properties of a-plane ZnCdO films with various Cd contents have been investigated and compared. The photoluminescence peak of the a-plane Zn0.957Cd O-0.043 film, was observed to be centered at 429 nm at 25 degrees C. We demonstrated a heterostructure light-emitting diode (LED) using nonpolar n-type Zn0.957Cd0.043O/p-type GaN films. The rectifying behavior of the current-voltage characteristics was observed with a turn-on voltage of 5 V. The electroluminescence of the LED showed emission peaks including 430 nm, which indicates the near-band-edge emission of a-plane Zn0.957Cd0.043O at 25 degrees C. (C) 2017 Elsevier B.V. All rights reserved.
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Related Researcher
- Baik, Kwang Hyeon
- Science & Technology (Department of Nanomaterials Engineering)