Effects of Li doping on the structural and electrical properties of solution-processed ZnO films for high-performance thin-film transistors
- Authors
- Bang, Kyuhyun; Son, Gi-Cheol; Son, Myungwoo; Jun, Ji-Hyun; An, Heeju; Baik, Kwang Hyeon; Myoung, Jae-Min; Ham, Moon-Ho
- Issue Date
- 30-Mar-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Zinc oxide; Lithium; Thin-film transistors; Solution process; Metal oxide semiconductors
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.739, pp.41 - 46
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 739
- Start Page
- 41
- End Page
- 46
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3889
- DOI
- 10.1016/j.jallcom.2017.12.186
- ISSN
- 0925-8388
- Abstract
- We report the structural and electrical properties of Li-doped ZnO (LZO) films, which are spin-coated via a simple solution process using Zn and Li precursor solutions. The Li doping improves the crystallinity of the ZnO films, and the LZO films exhibit a relatively dense and smooth surface morphology compared to that of the undoped ZnO films. Back-gated LZO thin-film transistors (TFTs) are fabricated onto a heavily p-doped Si substrate with a SiO2 gate dielectric, and operated in enhancement mode. In the case of the LZO TFT with a Li doping concentration of 0.50 mol%, the highest field-effect mobility of 5.18 cm(2) V-1 s(-1) is obtained; the on/off current ratio and subthreshold swing are 107 and 1.2 V dec(-1), respectively. These results demonstrate that Li doping can effectively modulate the structural and electrical properties of ZnO-based films, facilitating the fabrication of LZO TFTs with enhanced performance. (C) 2017 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.