Joule-heating Induced Crystallization (JIC) of Amorphous Silicon FilmsJoule-heating Induced Crystallization (JIC) of Amorphous Silicon Films
- Other Titles
- Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films
- Authors
- 고다영; 노재상
- Issue Date
- 2018
- Publisher
- 한국마이크로전자및패키징학회
- Keywords
- Crystallization; Thin Film Transistor; Poly-Si; Joule-heating; AMOLED
- Citation
- 마이크로전자 및 패키징학회지, v.25, no.4, pp.101 - 104
- Journal Title
- 마이크로전자 및 패키징학회지
- Volume
- 25
- Number
- 4
- Start Page
- 101
- End Page
- 104
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/4207
- ISSN
- 1226-9360
- Abstract
- An electric field was applied to a Mo conductive layer in the sandwiched structure of glass/SiO2/Mo/SiO2/ a-Si to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy.
We report here the blanket crystallization of amorphous silicon films using the 2nd generation glass substrate.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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