High quality nitrogen-incorporated aluminium oxide (Al2O3) for normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor HEMTs (MIS-HFETs)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 차호영 | - |
dc.date.available | 2020-07-10T05:01:14Z | - |
dc.date.created | 2020-07-08 | - |
dc.date.issued | 2017-07-04 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5527 | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEIE | - |
dc.title | High quality nitrogen-incorporated aluminium oxide (Al2O3) for normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor HEMTs (MIS-HFETs) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 차호영 | - |
dc.identifier.bibliographicCitation | AWAD proceeding, v.1, no.1, pp.1 - 4 | - |
dc.relation.isPartOf | AWAD proceeding | - |
dc.citation.title | AWAD proceeding | - |
dc.citation.volume | 1 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
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