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High quality nitrogen-incorporated aluminium oxide (Al2O3) for normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor HEMTs (MIS-HFETs)
- Authors
- 차호영
- Issue Date
- 4-Jul-2017
- Publisher
- IEIE
- Citation
- AWAD proceeding, v.1, no.1, pp.1 - 4
- Journal Title
- AWAD proceeding
- Volume
- 1
- Number
- 1
- Start Page
- 1
- End Page
- 4
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)