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Recessed AlGaN/GaN-on-Si MIS-HFET Fabricated Using PECVD SiON Gate Insulator with Forming Gas Annealing
- Authors
- 차호영
- Issue Date
- 7-Feb-2017
- Publisher
- 학회
- Citation
- 학회, v.00, no.00, pp.00 - 00
- Journal Title
- 학회
- Volume
- 00
- Number
- 00
- Start Page
- 00
- End Page
- 00
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)