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Activation Behavior of Phosphorus Doped Poly-Si
- Authors
- 노재상
- Issue Date
- 31-Jan-2017
- Publisher
- IJETAE
- Citation
- IJETAE, v.Vol. 8, no.Issue 1, pp.169 - 171
- Journal Title
- IJETAE
- Volume
- Vol. 8
- Number
- Issue 1
- Start Page
- 169
- End Page
- 171
- ISSN
- 2250-2459
- Abstract
- Abstract? Ion shower doping with a main ion source of P2Hx was conducted on ELA Poly-Si. The three different annealing methods were employed such as (i) FA (furnace annealing), (ii) ELA (excimer laser annealing) and (iii) RTA (rapid thermal annealing), respectively. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si
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