Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation
- Authors
- Keum, Dongmin; Cho, Geunho; Kim, Hyungtak
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.11, pp.S3030 - S3033
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 6
- Number
- 11
- Start Page
- S3030
- End Page
- S3033
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/6902
- DOI
- 10.1149/2.0071711jss
- ISSN
- 2162-8769
- Abstract
- AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and schottky HFETs were irradiated with 18 MeV alpha-particles. Irradiated devices showed degradation in current-voltage (I-V) and capacitance-voltage (C-V) characteristics. After irradiation, both devices exhibited the positive shift of threshold voltage (V-th) and the increase of on-resistance (R-on). We also observed the increase of contact (R-C) and sheet resistance (R-sh) as irradiation fluence increased. Post-irradiation characteristics were attributed to irradiation-induced displacement damage with strong dependence on fluence. Hall pattern measurement confirmed significant degradation of carrier transport property by alpha-particle irradiation. Extracted density of oxide interface states was also increased after irradiation. (c) The Author(s) 2017. Published by ECS. All rights reserved.
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