High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae-Gil | - |
dc.contributor.author | Kim, Hyun-Seop | - |
dc.contributor.author | Seo, Kwang-Seok | - |
dc.contributor.author | Cho, Chun-Hyung | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.date.available | 2020-07-10T05:50:29Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/7515 | - |
dc.description.abstract | A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 degrees C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 m Omega cm(2), and a breakdown voltage of 810 V. (C) 2016 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | OPERATION | - |
dc.subject | HEMTS | - |
dc.title | High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Chun-Hyung | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1016/j.sse.2016.04.016 | - |
dc.identifier.scopusid | 2-s2.0-84966775438 | - |
dc.identifier.wosid | 000376199800006 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.122, pp.32 - 36 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 122 | - |
dc.citation.startPage | 32 | - |
dc.citation.endPage | 36 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordAuthor | AlGaN/GaN | - |
dc.subject.keywordAuthor | PECVD | - |
dc.subject.keywordAuthor | Silicon dioxide | - |
dc.subject.keywordAuthor | Normally-off | - |
dc.subject.keywordAuthor | Recessed-gate | - |
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