High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors
- Authors
- Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young
- Issue Date
- Aug-2016
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- AlGaN/GaN; PECVD; Silicon dioxide; Normally-off; Recessed-gate
- Citation
- SOLID-STATE ELECTRONICS, v.122, pp.32 - 36
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 122
- Start Page
- 32
- End Page
- 36
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/7515
- DOI
- 10.1016/j.sse.2016.04.016
- ISSN
- 0038-1101
- Abstract
- A high quality SiO2 deposition process using a plasma enhanced chemical vapor deposition system has been developed for the gate insulator process of normally-off recessed-gate AlGaN/GaN metal-oxide-semiconductor-heterostructure field-effect transistors (MOS-HFETs). SiO2 films were deposited by using SiH4 and N2O mixtures as reactant gases. The breakdown field increased with increasing the N2O flow rate. The optimum SiH4/N2O ratio was 0.05, which resulted in a maximum breakdown field of 11 MV/cm for the SiO2 film deposited on recessed GaN surface. The deposition conditions were optimized as follows; a gas flow rate of SiH4/N2O (=27/540 sccm), a source RF power of 100 W, a pressure of 2 Torr, and a deposition temperature of 350 degrees C. A fabricated normally-off MOS-HFET exhibited a threshold voltage of 3.2 V, a specific on-resistance of 4.46 m Omega cm(2), and a breakdown voltage of 810 V. (C) 2016 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
- College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.