Thermoelectric Thin Film Devices for Energy Harvesting with the Heat Dissipated from High-Power Light-Emitting Diodes
- Authors
- Kim, Jae-Hwan; Kim, Woo-Jun; Oh, Tae-Sung
- Issue Date
- Jul-2016
- Publisher
- SPRINGER
- Keywords
- Thermoelectric device; thin film; bismuth telluride; antimony telluride; seed layer; electrodeposition
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.45, no.7, pp.3410 - 3417
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 45
- Number
- 7
- Start Page
- 3410
- End Page
- 3417
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/7646
- DOI
- 10.1007/s11664-016-4485-6
- ISSN
- 0361-5235
- Abstract
- We examined the power-generation characteristics of thin-film devices using the heat dissipated from high-power light-emitting diodes. The thin-film device was fabricated around an light-emitting diode (LED) chip by electrodepositing four pairs of the 10 mu m-thick Bi2Te3 and Sb2Te3 films using either the high resistive Ti seed layer or the more conductive Ti/Cu/Au seed layer. The seed layer effect was more profound for the output power of the thin-film device than its output voltage. The open circuit voltages of 0.61 mV at Delta T for 4.1 K and 0.52 mV at Delta T for 4.9 K were obtained for the thin-film devices fabricated on the highly resistive Ti seed layer and the more conductive Ti/Cu/Au seed layer, respectively. Compared to 0.64 nW at Delta T for 4.1 K for the device processed on the more resistive Ti seed layer, a large maximum output power of 33.6 nW was obtained at Delta T of 4.9 K for the device built on the less resistive Ti/Cu/Au seed layer.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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