Extraction of interface trap density by analyzing organohalide perovskite and metal contacts using device simulation
- Authors
- Shim, Hayeon; Kwon, Yongwoo
- Issue Date
- 1-Dec-2019
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.9, no.12
- Journal Title
- AIP ADVANCES
- Volume
- 9
- Number
- 12
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/790
- DOI
- 10.1063/1.5127959
- ISSN
- 2158-3226
- Abstract
- We estimated the interface trap density by examining methylamine-lead-iodide (MALI, CH3NH3PbI3) and metal contacts. We analyzed experimental current-voltage curves from two MALI-based resistive memory devices, which are Au/MALI/indium-tin-oxide and Ag/MALI/Pt, using a device simulator. We obtained effective work functions (EWFs) for MALI/metal contacts by considering Fermi level pinning attributed to the interface states comprising metal-induced gap states (MIGSs) and interface traps. Through our theoretical consideration, we concluded that the interface trap density is about 10(15) eV(-1) cm(-2) at MALI/metal contacts because the low MIGS density of about 10(13) eV(-1) cm(-2) obtained from a theoretical equation makes little contribution to the interface state density of 10(15) eV(-1) cm(-2) obtained from the linear fitting between the metal work functions and the EWFs. (C) 2019 Author(s).
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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