Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator
DC Field | Value | Language |
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dc.contributor.author | Cho, Geunho | - |
dc.contributor.author | Cha, Ho-young | - |
dc.contributor.author | Kim, Hyungtak | - |
dc.date.available | 2020-07-10T02:36:24Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/808 | - |
dc.description.abstract | The influence of oxygen-plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen-plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen-plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | ALGAN/GAN | - |
dc.subject | HEMTS | - |
dc.subject | SINX | - |
dc.title | Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cha, Ho-young | - |
dc.contributor.affiliatedAuthor | Kim, Hyungtak | - |
dc.identifier.doi | 10.3390/ma12233968 | - |
dc.identifier.wosid | 000510178700164 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.12, no.23 | - |
dc.relation.isPartOf | MATERIALS | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ALGAN/GAN | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | SINX | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordAuthor | in situ SiN | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | oxygen plasma | - |
dc.subject.keywordAuthor | interface trap | - |
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