Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator
- Authors
- Cho, Geunho; Cha, Ho-young; Kim, Hyungtak
- Issue Date
- Dec-2019
- Publisher
- MDPI
- Keywords
- gallium nitride; heterostructure; in situ SiN; SiO2; oxygen plasma; interface trap
- Citation
- MATERIALS, v.12, no.23
- Journal Title
- MATERIALS
- Volume
- 12
- Number
- 23
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/808
- DOI
- 10.3390/ma12233968
- ISSN
- 1996-1944
- Abstract
- The influence of oxygen-plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen-plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen-plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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