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GaN Based Ethanol Sensor
- Authors
- 백광현
- Issue Date
- 20-Jan-2016
- Publisher
- Electochemical Society
- Citation
- ECS Transactions, v.75, no.40, pp.9 - 12
- Journal Title
- ECS Transactions
- Volume
- 75
- Number
- 40
- Start Page
- 9
- End Page
- 12
- ISSN
- 1938-5862
- Abstract
- Silver Schottky diode on AlGaN/GaN high electron mobility transistor structure was investigated for the application of ethanol sensing. The device showed the decrease of current upon ethanol exposure from the measurement temperature of 200˚C due to the increase in Schottky barrier height. At 250˚C, the stable and fast current changes depending on the exposed ethanol concentrations from 0.0058 to 5.8% were observed.
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Related Researcher
- Baik, Kwang Hyeon
- Science & Technology (Department of Nanomaterials Engineering)