Thermoelectric Power-Generation Characteristics of a Thin-Film Device Processed by the Flip-Chip Bonding of Bi2Te3 and Sb2Te3 Thin-Film Legs Using an Anisotropic Conductive Adhesive
- Authors
- Shin, Kang-Je; Oh, Tae-Sung
- Issue Date
- Oct-2015
- Publisher
- JAPAN INST METALS & MATERIALS
- Keywords
- thermoelectric device; thin film; bismuth telluride; antimony telluride; electrodeposition; flip chip; anisotropic conductive adhesive
- Citation
- MATERIALS TRANSACTIONS, v.56, no.10, pp.109 - 114
- Journal Title
- MATERIALS TRANSACTIONS
- Volume
- 56
- Number
- 10
- Start Page
- 109
- End Page
- 114
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9429
- DOI
- 10.2320/matertrans.M2015236
- ISSN
- 1345-9678
- Abstract
- A thermoelectric thin-film device with a cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bumps on the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin-film legs electrodeposited on the bottom substrate. The internal resistance of the thin-film device was 59 Omega, most of which can be attributed to the interfacial resistance of the 484 flip-chip joints. The thin-film device exhibited an open-circuit voltage of 382 mV and a maximum output power of 652 mu W for a temperature difference of 36.8 K applied across its top and bottom substrates.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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