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Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using Plasma Enhanced Atomic Layer Deposition
- Authors
- 차호영
- Issue Date
- 29-Sep-2015
- Publisher
- SSDM
- Citation
- SSDM proceeding, v.1, no.1, pp.32 - 32
- Journal Title
- SSDM proceeding
- Volume
- 1
- Number
- 1
- Start Page
- 32
- End Page
- 32
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)