Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer
- Authors
- Lee, Jae-Gil; Kim, Hyun-Seop; Kim, Dong-Hwan; Han, Sang-Woo; Seo, Kwang-Seok; Cha, Ho-Young
- Issue Date
- Aug-2015
- Publisher
- IOP PUBLISHING LTD
- Keywords
- AlGaN/GaN; ohmic; Au-free; HFET
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.8
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 30
- Number
- 8
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9598
- DOI
- 10.1088/0268-1242/30/8/085005
- ISSN
- 0268-1242
- Abstract
- We have developed a low-temperature ohmic contact process with a recessed overhang configuration for Au-free (complementary metal-oxide semiconductor) CMOS-compatible AlGaN/GaN heterostructure field effect transistors (HFETs). The recessed overhang configuration has a Ti/Al bilayer directly in contact with the AlGaN/GaN heterojunction interface at the recessed sidewall overlaid with the AlGaN barrier layer, which allows good and reproducible ohmic formation with low-temperature annealing. The optimum Ti/Al thickness was 40/200 nm, which resulted in an R-c of 0.76 Omega mm with excellent surface morphology when annealed at 550 degrees C for 1 min. The device fabricated with a Ni/Mo gate exhibited a maximum drain current density of similar to 500 mA mm(-1), a specific on-resistance of 1.35 m Omega cm(2) and a breakdown voltage of >1 kV.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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