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AlGaN/GaN heterojunction field-effect transistor with embedded clamping diode
- Authors
- Han, Sang-Woo; Park, Sung-Hoon; Cha, Ho-Young
- Issue Date
- Aug-2015
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.8, no.8
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 8
- Number
- 8
- ISSN
- 1882-0778
- Abstract
- We developed an AlGaN/GaN heterojunction field-effect transistor with a MOS gate and an embedded clamping diode to achieve normally-off operation. The input signal level shifts downward when a capacitor is connected to the device because of the embedded diode, which mimics a clamping circuit. Thus, the device, which initially has a negative threshold voltage, functions as a normally-off device with a "virtual" positive threshold voltage. The proposed device has the advantages of high current density and easy implementation compared with the conventional AlGaN/GaN-based normally-off devices. (C) 2015 The Japan Society of Applied Physics
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)