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K doping effect on structural and optical properties of ZnO nanorods grown on semipolar (11(2)over-bar2) GaN films using a hydrothermal growth method

Authors
Jang, SoohwanSon, PyungheeKim, JiminLee, Sung-NamBaik, Kwang Hyeon
Issue Date
1-Jul-2015
Publisher
OPTICAL SOC AMER
Citation
OPTICAL MATERIALS EXPRESS, v.5, no.7
Journal Title
OPTICAL MATERIALS EXPRESS
Volume
5
Number
7
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9667
DOI
10.1364/OME.5.001621
ISSN
2159-3930
Abstract
In this work, we investigated the potassium (K) doping effect on structural and optical properties of ZnO nanorods grown on semipolar (11 (2) over bar2) GaN films using a hydrothermal growth method. The X-ray diffraction theta-2 theta scan of the ZnO nanorods without any seeding step showed that most of the single-crystalline ZnO nanorods were highly inclined to the c-axis [0001] direction. In the case of hydrothermally-grown K-doped ZnO nanorods, growth occurred not only in the normal (11 (2) over bar2) direction, but also along the c-axis [0001] and m-axis [10 (1) over bar0] directions. As the growth proceeded even further, micron-sized ZnO pyramids having nonpolar and semipolar planes were formed on the ZnO nanorods. The optical properties of K-doped ZnO nanorods and pyramids were studied using cathodoluminescence measurements. While the near band edge peak was centered at 382 nm for pure c-plane ZnO nanorods, a significant peak shift to 418 nm for the K-doped ZnO nanorods was observed with relatively broad emissions. It is believed that the violet emissions centered at 418 nm are mainly associated with both K interstitial and Zn interstitial defects. Thus, the electron transitions from K interstitial levels to the valence band can lead to relatively strong violet emissions at 418 nm for K-doped ZnO nanorods and pyramids. (C)2015 Optical Society of America
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Baik, Kwang Hyeon
Science & Technology (Department of Nanomaterials Engineering)
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