Micro-Power Generation Characteristics of Thermoelectric Thin Film Devices Processed by Electrodeposition and Flip-Chip Bonding
- Authors
- Shin, Kang-Je; Oh, Tae-Sung
- Issue Date
- Jun-2015
- Publisher
- SPRINGER
- Keywords
- Thermoelectric device; thin film; bismuth telluride; antimony telluride; flip chip; anisotropic conductive adhesive
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.2026 - 2033
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 44
- Number
- 6
- Start Page
- 2026
- End Page
- 2033
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9813
- DOI
- 10.1007/s11664-015-3647-2
- ISSN
- 0361-5235
- Abstract
- A thermoelectric thin film device of cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bonding bumps electrodeposited on the Ti/Cu/Au electrodes in the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin film legs electrodeposited on the Ti/Cu/Au electrodes in the bottom substrate. Using the output voltage-current curve, the internal resistance of the thin film device was measured to be 21.4 Omega at temperature differences of 9.8-39.7 K across the device. The thin film device exhibited an open-circuit voltage of 320 mV and a maximum output power of 1.1 mW with a power density of 3.84 mW/cm(2) at a temperature difference of 39.7 K applied across the thin film device.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9813)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.