Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
- Authors
- Choi, Jinseok; Choi, Gab Soo; An, Sung Jin
- Issue Date
- 24-Jan-2019
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.9
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 9
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19103
- DOI
- 10.1038/s41598-018-37103-7
- ISSN
- 2045-2322
- Abstract
- A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for high-temperature devices. However, these materials exhibit environmental problems and are expensive. Here, we show that the die attach process using the backside metal of the Ag/Sn/Ag sandwich structure is successfully developed for the mass production of Si devices. It has a low-temperature bonding process (235 degrees C), a high remelting temperature (above 400 degrees C), and rapid bonding time (20 ms). In addition, it exhibits better properties than Au-12Ge and Pb-10Sn backside metals, which are conventional materials for the high-temperature die attach process. After the die bonding process, various reliability tests of Si devices with the Ag/Sn/Ag backside metal structure were performed.
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Collections - Department of Materials Science and Engineering > 1. Journal Articles
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