Heteroepitaxial fabrication and structural characterizations of ultrathin GaN nanotube arrays
DC Field | Value | Language |
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dc.contributor.author | An, Sung Jin | - |
dc.date.available | 2021-04-29T08:43:48Z | - |
dc.date.created | 2020-06-16 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19208 | - |
dc.description.abstract | We report on the heteroepitaxial fabrication and the structural characterizations of ultrafine GaN nanotube arrays. The ultrathin GaN nanotube arrays were fabricated by using epitaxial growth of a ultrathin GaN layer on ZnO nanoneedles and etching core Zno nanoneedles. Epitaxial growth of GaN and precise etcing control of core ZnO nanoneedles were obtained by using low-pressure metalorganic vapor-phase epitaxy. ZnO nanoneedles were grown on Si and sapphire substrates by using catalyst-free metal-organic chemical vapor deposition. Furthermore, the structural properties of the nanostructures were investigated using both synchrotron-radiation X-ray diffraction and highresolution transmission electron microscopy. The strain induced during the GaN deposition on ZnO was nearly sustained even after the removal of core ZnO. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | COAXIAL NANOROD HETEROSTRUCTURES | - |
dc.subject | GALLIUM NITRIDE NANOTUBES | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | NANOWIRE HETEROSTRUCTURES | - |
dc.subject | CORE-SHELL | - |
dc.subject | MULTICOLOR | - |
dc.subject | GROWTH | - |
dc.title | Heteroepitaxial fabrication and structural characterizations of ultrathin GaN nanotube arrays | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | An, Sung Jin | - |
dc.identifier.doi | 10.3938/jkps.61.305 | - |
dc.identifier.wosid | 000307441500001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.3, pp.L305 - L308 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 61 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | L305 | - |
dc.citation.endPage | L308 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001687066 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | COAXIAL NANOROD HETEROSTRUCTURES | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOTUBES | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | NANOWIRE HETEROSTRUCTURES | - |
dc.subject.keywordPlus | CORE-SHELL | - |
dc.subject.keywordPlus | MULTICOLOR | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Nanotube | - |
dc.subject.keywordAuthor | Heterostructure | - |
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