Heteroepitaxial fabrication and structural characterizations of ultrathin GaN nanotube arrays
- Authors
- An, Sung Jin
- Issue Date
- Aug-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO; GaN; Nanotube; Heterostructure
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.3, pp.L305 - L308
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 3
- Start Page
- L305
- End Page
- L308
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19208
- DOI
- 10.3938/jkps.61.305
- ISSN
- 0374-4884
- Abstract
- We report on the heteroepitaxial fabrication and the structural characterizations of ultrafine GaN nanotube arrays. The ultrathin GaN nanotube arrays were fabricated by using epitaxial growth of a ultrathin GaN layer on ZnO nanoneedles and etching core Zno nanoneedles. Epitaxial growth of GaN and precise etcing control of core ZnO nanoneedles were obtained by using low-pressure metalorganic vapor-phase epitaxy. ZnO nanoneedles were grown on Si and sapphire substrates by using catalyst-free metal-organic chemical vapor deposition. Furthermore, the structural properties of the nanostructures were investigated using both synchrotron-radiation X-ray diffraction and highresolution transmission electron microscopy. The strain induced during the GaN deposition on ZnO was nearly sustained even after the removal of core ZnO.
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