6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations
- Authors
- Jung, Junki; Seok, Ogyun; Kang, In Ho; Kim, Hyoung Woo; Bahng, Wook; Lee, Ho-Jun
- Issue Date
- Apr-2021
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- SiC; power device; Edge termination; JTE; FGR
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.21, no.2, pp.119 - 125
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 21
- Number
- 2
- Start Page
- 119
- End Page
- 125
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/21114
- DOI
- 10.5573/JSTS.2021.21.2.119
- ISSN
- 1598-1657
- Abstract
- Edge termination structures that are insensitive to process deviations were investigated to obtain 6.5 kV SIC power devices with stable blocking characteristics. Edge terminations were designed and verified by a TCAD simulation in consideration of undesirable surface charge states and variation of the implantation window in the termination region. A constant-space floating guard ring (CS-FGR) was sensitive to the variation of the implantation window. A gradually increasing space (GIS) FGR was less sensitive to process deviations than the CS-FGR. We concluded that the GIS-FGR is sufficiently stable for use in high-voltage SiC devices at surface charge densities (Q(surf)/q) of 0 to -1 x 10(12) cm(-2) and implantation window variations of -0.3 to +0.3 mu m. The optimized GIS-FGR exhibited a high breakdown voltage of over 8 kV at all the Q(surf)/q valnes and in the implantation window variation range considered in this paper.
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