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Two-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimenTwo-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimen
- Other Titles
- Two-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimen
- Authors
- Yang, Bee-lyong
- Issue Date
- Sep-2008
- Publisher
- Elsevier
- Citation
- Microelectronics Reliability, v.48, pp 1734 - 1736
- Pages
- 3
- Journal Title
- Microelectronics Reliability
- Volume
- 48
- Start Page
- 1734
- End Page
- 1736
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- There are no files associated with this item.
- Appears in
Collections - Department of Materials Science and Engineering > 1. Journal Articles
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