Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums
- Authors
- Kim, Myung Jun; Seo, Youngran; Kim, Hoe Chul; Lee, Yoonjae; Choe, Seunghoe; Kim, Young Gyu; Cho, Sung Ki; Kim, Jae Jeong
- Issue Date
- 1-May-2015
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Through Silicon Via (TSV); copper electrodeposition; leveler; choline; bottom-up filling
- Citation
- ELECTROCHIMICA ACTA, v.163, pp 174 - 181
- Pages
- 8
- Journal Title
- ELECTROCHIMICA ACTA
- Volume
- 163
- Start Page
- 174
- End Page
- 181
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/26959
- DOI
- 10.1016/j.electacta.2015.02.173
- ISSN
- 0013-4686
1873-3859
- Abstract
- Through Silicon Via (TSV) technology is essential to accomplish 3-dimensional packaging of electronics. Hence, more reliable and faster TSV filling by Cu electrodeposition is required. Our approach to improve Cu gap-filling in TSV is based on the development of new organic additives for feature filling. Here, we introduce our achievements from the synthesis of choline-based leveler to the feature filling using a synthesized leveler. The choline-based leveler, which includes two quaternary ammoniums at both ends of the molecule, is synthesized from glutaric acid. The characteristics of the choline-based additive are examined by the electrochemical analyses, and it is confirmed that the choline-based leveler shows a convection dependent adsorption behavior, which is essential for leveling. The interactions between the polymeric suppressor, accelerator, and the choline-based leveler are also investigated by changing the convection condition. Using the combination of suppressor, accelerator, and the choline-based leveler, the extreme bottom-up filling of Cu at trenches with dimensions similar to TSV are fulfilled. The mechanism of Cu gap-filling is demonstrated based on the results of electrochemical analyses and feature filling. (C) 2015 Elsevier Ltd. All rights reserved.
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