Organic thin-film transistors using photocurable acryl-fuctionalized polyhedral oligomeric silsesquioxanes as gate dielectrics
- Authors
- Kim, Yuntae; Cho, Hyunduck; Kwak, Jeonghun; Lee, Jong-Keun; Lee, Changhee; Hwang, Do-Hoon
- Issue Date
- Dec-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Photocurable insulator; Polyhedral oligomeric silsesquioxane; Organic thin-film transistor
- Citation
- SYNTHETIC METALS, v.162, no.21-22, pp 1798 - 1803
- Pages
- 6
- Journal Title
- SYNTHETIC METALS
- Volume
- 162
- Number
- 21-22
- Start Page
- 1798
- End Page
- 1803
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28132
- DOI
- 10.1016/j.synthmet.2012.08.015
- ISSN
- 0379-6779
- Abstract
- Polyhedral oligomeric silsesquioxane (POSS)-based photocurable insulating materials with methacryl (POSS-MA) or methylmethacryl (POSS-MMA) functional groups were used as gate dielectrics for pentacene-based organic thin-film transistors (OTFTs). Thin films of POSS-MA and POSS-MMA were cross-linked and completely solidified under UV irradiation in the presence of selected photoradical initiators. Metal/insulator/metal devices with a structure of indium tin oxide (ITO)/insulator/Au were fabricated to measure the leakage current and capacitance of the POSS-MA and POSS-MMA thin films. Pentacene-based OTFTs were fabricated using the synthesized POSS derivatives as gate dielectric layers, and the performance of the devices was compared with that of an OTFT fabricated using a well-known poly(vinylphenol) (PVP) insulator. The performance of the OTFTs fabricated using the POSS-MA and POSS-MMA film was comparable to that of the device fabricated using the PVP insulator. The highest mobility of the pentacene-based OTFTs using POSS-MA and POSS-MMA insulators were 0.13 and 0.17 cm(2)/Vs, respectively. (C) 2012 Elsevier B.V. All rights reserved.
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