Enhanced Anion Interaction by Polarity Control on CNTVT:SVS Copolymers for Improving Nonvolatile Characteristics in Neuromorphic Computing
- Authors
- Lee, Donghwa; Ayuningtias, Landep; Hwang, Jinwoo; Sung, Junho; Kang, Joonhee; Kim, Yun-Hi; Lee, Eunho
- Issue Date
- May-2024
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS MATERIALS LETTERS, v.6, no.5, pp 2329 - 2338
- Pages
- 10
- Journal Title
- ACS MATERIALS LETTERS
- Volume
- 6
- Number
- 5
- Start Page
- 2329
- End Page
- 2338
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28739
- DOI
- 10.1021/acsmaterialslett.4c00087
- ISSN
- 2639-4979
- Abstract
- Synaptic devices that simulate biological functions are of interest in neuromorphic computing, because of their low power consumption characteristics. However, achieving long-term plasticity (LTP) in electrolyte-gated transistors (EGTs) is challenging, because the electric double layer (EDL) of the electrolyte/channel disappears when the gate electrode voltage is removed. In this study, we fabricated a CNTVT-based EGTs by adjusting the polarity of the backbone. This process involves improving the polarity of the backbone by adjusting the DPP-CNTVT ratio. Furthermore, it facilitates increased binding of TFSI anions in DEME-TFSI at the electrolyte/channel interface. The CNTVT-based EGTs successfully achieved LTP and exhibited essential synaptic properties, including paired-pulse facilitation (PPF) and a high-pass filter. Furthermore, the results of driving MNIST handwritten digits based on long-term potentiation/depression (LTP/LTD) with controlled backbone polarity improved from 50.18% to 93.28%. These findings offer a simple architectural design for synaptic devices that leverage state-of-the-art neural modeling techniques.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.