Enhancing Die and Wire Bonding Process Reliability: Microstructure Evolution and Shear Strength Analysis of Sn-Sb Backside Metalopen access
- Authors
- Choi, Yeo Jin; Baek, Seung Mun; Lee, Yu Na; An, Sung Jin
- Issue Date
- Mar-2024
- Publisher
- MATERIALS RESEARCH SOC KOREA
- Keywords
- backside metal; Sn-Sb; die attach; nanomaterials; shear strength
- Citation
- KOREAN JOURNAL OF MATERIALS RESEARCH, v.34, no.3, pp 170 - 174
- Pages
- 5
- Journal Title
- KOREAN JOURNAL OF MATERIALS RESEARCH
- Volume
- 34
- Number
- 3
- Start Page
- 170
- End Page
- 174
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28795
- DOI
- 10.3740/MRSK.2024.34.3.170
- ISSN
- 1225-0562
2287-7258
- Abstract
- In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 degrees C, die bonding and isothermal heat treatment at 330 degrees C for 5 min and wire bonding at 260 degrees C, respectively. At the interface between the chip and lead frame, Ni3Sn4 and Ag3Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni3Sn4 and Ag3Sn IMCs. After the wire bonding process, the interface is composed of Ni3Sn4, Ag3Sn and (Ag,Cu)(3)Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.
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