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Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs
- Authors
- Colinge, JP; Park, JW; Xiong, W
- Issue Date
- Aug-2003
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- insulated gate FETs; MOS devices; semiconductor device modeling; SOI technology
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.24, no.8, pp.515 - 517
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 24
- Number
- 8
- Start Page
- 515
- End Page
- 517
- ISSN
- 0741-3106
- Abstract
- The subthreshold swing and threshold voltage characteristics of multiple-gate SOI transistors have been numerically simulated. These devices behave like cylindrical, surrounding gate devices, with the exception of the corner inversion effect. The corner inversion effect is, however, shown to be negligible if the devices are fully depleted devices or if the gate insulator thickness is small enough.
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