Analysis of the dependence of indium-gallium-zinc oxide thin-film transistor properties on the gate interface material using a two-stack gate-insulator structure
DC Field | Value | Language |
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dc.contributor.author | Park, Jae Chul | - |
dc.contributor.author | Park, Tae Kwang | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T19:26:42Z | - |
dc.date.available | 2021-08-11T19:26:42Z | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 0141-9382 | - |
dc.identifier.issn | 1872-7387 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/10239 | - |
dc.description.abstract | To study the interface effects on the device performance, we fabricated indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) with a two-stack gate-insulator structure. The two-stack gate insulator was composed of a thick main insulator and a thin interfacial insulator; the main insulator determines the effective permittivity of the gate insulator, and the interfacial insulator regulates the gate/active interface properties. The a-IGZO TFTs had about 10 cm(2) V-1 s(-1) field effect mobility (mu(FE)) values and 10(7)-10(8) switching ratios. The dependences of mu(FE) and threshold voltage, V-TH, on the channel width to length ratio were different according to the electron affinity, chi, of the interfacial insulator. The contact resistance between the source/drain electrode and the active layer, and the electron-injection barrier height from the active layer to the interfacial gate insulator layer could explain this finding. In this work, we successfully demonstrated the method to distinguish the interface-related phenomena from the insulator permittivity-related phenomena. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Analysis of the dependence of indium-gallium-zinc oxide thin-film transistor properties on the gate interface material using a two-stack gate-insulator structure | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.displa.2015.09.003 | - |
dc.identifier.scopusid | 2-s2.0-84942427896 | - |
dc.identifier.wosid | 000364271500011 | - |
dc.identifier.bibliographicCitation | Displays, v.39, pp 100 - 103 | - |
dc.citation.title | Displays | - |
dc.citation.volume | 39 | - |
dc.citation.startPage | 100 | - |
dc.citation.endPage | 103 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Indium gallium zinc oxide | - |
dc.subject.keywordAuthor | Gate insulator | - |
dc.subject.keywordAuthor | Interface | - |
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