Analysis of the dependence of indium-gallium-zinc oxide thin-film transistor properties on the gate interface material using a two-stack gate-insulator structure
- Authors
- Park, Jae Chul; Park, Tae Kwang; Lee, Ho-Nyeon
- Issue Date
- Oct-2015
- Publisher
- Elsevier BV
- Keywords
- Thin film transistor; Indium gallium zinc oxide; Gate insulator; Interface
- Citation
- Displays, v.39, pp 100 - 103
- Pages
- 4
- Journal Title
- Displays
- Volume
- 39
- Start Page
- 100
- End Page
- 103
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/10239
- DOI
- 10.1016/j.displa.2015.09.003
- ISSN
- 0141-9382
1872-7387
- Abstract
- To study the interface effects on the device performance, we fabricated indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) with a two-stack gate-insulator structure. The two-stack gate insulator was composed of a thick main insulator and a thin interfacial insulator; the main insulator determines the effective permittivity of the gate insulator, and the interfacial insulator regulates the gate/active interface properties. The a-IGZO TFTs had about 10 cm(2) V-1 s(-1) field effect mobility (mu(FE)) values and 10(7)-10(8) switching ratios. The dependences of mu(FE) and threshold voltage, V-TH, on the channel width to length ratio were different according to the electron affinity, chi, of the interfacial insulator. The contact resistance between the source/drain electrode and the active layer, and the electron-injection barrier height from the active layer to the interfacial gate insulator layer could explain this finding. In this work, we successfully demonstrated the method to distinguish the interface-related phenomena from the insulator permittivity-related phenomena. (C) 2015 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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