Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator

Abstract

We report the low-frequency noise (LFN) behavior of amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator. The normalized noise power spectral density depended on channel length, L, with the form 1/L-2, and on the gate bias voltage, V-G, and threshold voltage, V-TH, with the form 1/(V-G - V-TH)(beta) where 1.5 < beta < 2.1. In addition, the scattering constant alpha was less than 10(5) Omega. These results suggest that the contact resistance has a significant role in the LFN behavior and the charge-carrier density fluctuation is the dominant origin of LFN. (C) 2014 The Japan Society of Applied Physics