Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator
- Authors
- Park, Jae Chul; Lee, Ho-Nyeon
- Issue Date
- May-2014
- Publisher
- IOP Publishing Ltd
- Keywords
- .
- Citation
- Japanese Journal of Applied Physics, v.53, no.5
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 53
- Number
- 5
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/12226
- DOI
- 10.7567/JJAP.53.054201
- ISSN
- 0021-4922
1347-4065
- Abstract
- We report the low-frequency noise (LFN) behavior of amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator. The normalized noise power spectral density depended on channel length, L, with the form 1/L-2, and on the gate bias voltage, V-G, and threshold voltage, V-TH, with the form 1/(V-G - V-TH)(beta) where 1.5 < beta < 2.1. In addition, the scattering constant alpha was less than 10(5) Omega. These results suggest that the contact resistance has a significant role in the LFN behavior and the charge-carrier density fluctuation is the dominant origin of LFN. (C) 2014 The Japan Society of Applied Physics
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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